The third generation semiconductor materials refer to the wide band gap semiconductor materials represented by silicon carbide (SIC), gallium nitride (GAN), zinc oxide (ZnO), diamond and aluminum nitride (AlN). Compared with the first and second generation semiconductor materials, the third generation semiconductor materials have wide band gap, high breakdown electric field, high thermal conductivity, high electron saturation rate and higher radiation resistance. Therefore, they are more suitable for making high-temperature, high-frequency, radiation resistance and high-power periods. They are usually also called wide band gap semiconductor materials (band gap width greater than 2.2ev), also known as high-temperature semiconductor materials. It is a key core material and electronic component supporting the innovative development of new generation mobile communication, new energy vehicles, high-speed rail trains, UHV power grid, national defense and military industry.